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PD - 91305C
V DSS = 55V
l AdvancedProcessTechnology
l Surface Mount (IRFZ46NS)
l Low-profile through-hole (IRFZ46NL)
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
Description
Advanced HEXFET ? Power MOSFETs from International
Rectifier utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET power MOSFETs are well known
for, provides the designer with an extremely efficient and
reliable device for use in a wide variety of applications.
G
IRFZ46NS
IRFZ46NL
HEXFET ? Power MOSFET
D
R DS(on) = 0.0165 ?
I D = 53A ?
S
D Pak
TheD 2 Pakisasurfacemountpowerpackagecapableof
accommodating die sizes up to HEX-4. It provides the highest
power capability and the lowest possible on-resistance in
any existing surface mount package. The D 2 Pak is suitable
for high current applications because of its low internal
connection resistance and can dissipate up to 2.0W in a
typical surface mount application.
The through-hole version (IRFZ46NL) is available for low-
profile applications.
Absolute Maximum Ratings
2
TO-262
I D @ T C = 25°C
I D @ T C = 100°C
I DM
P D @T A = 25°C
P D @T C = 25°C
V GS
I AR
E AR
dv/dt
T J
T STG
Parameter
Continuous Drain Current, V GS @ 10V ?
Continuous Drain Current, V GS @ 10V ?
Pulsed Drain Current ??
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Avalanche Current ?
Repetitive Avalanche Energy ?
Peak Diode Recovery dv/dt ??
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Max.
53 ?
37
180
3.8
107
0.71
± 20
28
11
5.0
-55 to + 175
300 (1.6mm from case )
Units
A
W
W
W/°C
V
A
mJ
V/ns
°C
Thermal Resistance
Parameter
Typ.
Max.
Units
R θ JC
R θ JA
Junction-to-Case
Junction-to-Ambient ( PCB Mounted,steady-state)**
???
???
1.4
40
°C/W
www.irf.com
1
04/08/04
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